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AS4C128M8D3LB-12BCN

Name: Alliance Memory AS4C128M8D3LB-12BCN
Brand: Alliance Memory
SKU: 913-A4C1288D3LB12BCN
Price: 162732.93 IDR
Availability: InStock

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Mouser No:

913-A4C1288D3LB12BCN

Mfr. No:

AS4C128M8D3LB-12BCN

Mfr.:

Alliance Memory

Description:

DRAM DDR3, 1G, 128M x 8, 1.35V, 78-ball BGA, 800MHz, (B die), Commercial Temp - Tray

Datasheet:

AS4C128M8D3LB-12BCN Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Alliance Memory AS4C128M8D3LB-12BCN

In Stock: 29

Stock:: 29 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp162.732,93	Rp162.732,93
	Rp151.522,05	Rp1.515.220,50
	Rp146.792,46	Rp3.669.811,50
	Rp143.289,06	Rp7.164.453,00
	Rp135.581,58	Rp13.558.158,00
	Rp131.903,01	Rp31.920.528,42
	Rp128.925,12	Rp62.399.758,08
	Rp126.472,74	Rp122.425.612,32
2.662	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Alliance Memory
Product Category:	DRAM
RoHS:
Type:	SDRAM - DDR3L
Memory Size:	1 Gbit
Data Bus Width:	8 bit
Maximum Clock Frequency:	800 MHz
Package/Case:	FBGA-78
Organisation:	128 M x 8
Access Time:	225 ps
Supply Voltage - Min:	1.283 V
Supply Voltage - Max:	1.45 V
Minimum Operating Temperature:	0 C
Maximum Operating Temperature:	+ 95 C
Series:	AS4C128M8D3LB
Packaging:	Tray
Brand:	Alliance Memory
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Product Type:	DRAM
Factory Pack Quantity:	242
Subcategory:	Memory & Data Storage
Supply Current - Max:	72 mA

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Datasheet

AS4C128M8D3LB-12BCN Datasheet (PDF)

REACH Declaration (PDF)

CAHTS:: 8542320020
USHTS:: 8542320032
MXHTS:: 8542320201
ECCN:: EAR99

DDR3 Synchronous DRAM

Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieves high-speed double-data-rate transfer rates of up to 1600Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features, and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pairs in a source synchronous fashion. These Alliance Memory devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.

DDR3L SDRAM

Alliance Memory DDR3L SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface that transfers two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clock-cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins. Alliance Memory DDR3L SDRAM is available in various package sizes.