AS4C64M16D3B-12BAN

Alliance Memory
913-A4C64M16D3B12BAN
AS4C64M16D3B-12BAN

Mfr.:

Description:
DRAM DDR3, 1G, 64M x 16, 1.5V, 96-ball FBGA, 800MHz, (B-die), Automotive Temp - Tray

ECAD Model:
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Availability

Stock:
0

You can still purchase this product for backorder.

Factory Lead Time:
8 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-,--
Ext. Price:
Rp-,--
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp207.751,62 Rp207.751,62
Rp193.037,34 Rp1.930.373,40
Rp187.081,56 Rp4.677.039,00
Rp182.702,31 Rp9.135.115,50
Rp174.118,98 Rp17.411.898,00
Rp166.061,16 Rp31.551.620,40
Rp163.083,27 Rp92.957.463,90
Rp161.156,40 Rp183.718.296,00
2.660 Quote

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: DRAM
RoHS:  
SDRAM - DDR3
1 Gbit
16 bit
800 MHz
FBGA-96
64 M x 16
20 ns
1.425 V
1.575 V
- 40 C
+ 105 C
AS4C64M16D3B
Tray
Brand: Alliance Memory
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 190
Subcategory: Memory & Data Storage
Supply Current - Max: 87 mA
Unit Weight: 3,698 g
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Attributes selected: 0

CNHTS:
8542329000
CAHTS:
8542320020
USHTS:
8542320032
MXHTS:
8542320201
ECCN:
EAR99

DDR3 Synchronous DRAM

Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieves high-speed double-data-rate transfer rates of up to 1600Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features, and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pairs in a source synchronous fashion. These Alliance Memory devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.