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GS8342Q08BD-357

Name: GSI Technology GS8342Q08BD-357
Brand: GSI Technology
SKU: 464-GS8342Q08BD-357
Price: 1184324 IDR
Availability: OutOfStock

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Mouser No:

464-GS8342Q08BD-357

Mfr. No:

GS8342Q08BD-357

Mfr.:

GSI Technology

Description:

SRAM 1.8 or 1.5V 4M x 8 36M

Datasheet:

GS8342Q08BD-357 Datasheet (PDF)

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp1.184.324	Rp1.184.324
	Rp1.093.937	Rp10.939.370
	Rp1.058.027	Rp31.740.810
	Rp1.031.576	Rp61.894.560
	Rp983.755	Rp103.294.275
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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	GSI Technology
Product Category:	SRAM
RoHS:	N
Memory Size:	36 Mbit
Organisation:	4 M x 8
Maximum Clock Frequency:	357 MHz
Interface Type:	Parallel
Supply Voltage - Max:	1.9 V
Supply Voltage - Min:	1.7 V
Supply Current - Max:	945 mA
Minimum Operating Temperature:	0 C
Maximum Operating Temperature:	+ 70 C
Mounting Style:	SMD/SMT
Package/Case:	BGA-165
Packaging:	Tray
Brand:	GSI Technology
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	Not Available
Memory Type:	DDR
Moisture Sensitive:	Yes
Product Type:	SRAM
Series:	GS8342Q08BD
Factory Pack Quantity:	15
Subcategory:	Memory & Data Storage
Tradename:	SigmaQuad-II
Type:	SigmaQuad-II

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Datasheet

GS8342Q08BD-357 Datasheet (PDF)

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CNHTS:: 8542319090
CAHTS:: 8542320041
USHTS:: 8542320041
JPHTS:: 854232029
KRHTS:: 8542321020
TARIC:: 8542324500
MXHTS:: 8542320201
ECCN:: 3A991.b.2.b

SigmaQuad-II SRAMs

GSI Technology SigmaQuad-II SRAMs feature built-in compliance with the SigmaQuad-II SRAM pinout standard for Separate I/O synchronous SRAMs. The SigmaQuad-II are 301,989,888-bit (288Mb) SRAMs. The GS82582D18/36GE SigmaQuad SRAMs are just one element in a family of low power, low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.

Quad SRAMs

GSI Technology Quad SRAMs combine capacity and performance with the ability to transfer four beats of data (two beats per data bus) in a single clock cycle. SigmaQuad SRAMs are synchronous memories with separate read and write data buses with unequaled transaction rates by competitors.