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IXBF42N300

Name: IXYS IXBF42N300
Brand: IXYS
SKU: 747-IXBF42N300
Price: 1189054 IDR
Availability: OutOfStock

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Mouser No:

747-IXBF42N300

Mfr. No:

IXBF42N300

Mfr.:

IXYS

Description:

MOSFETs ISOPLUS 3KV 24A DIODE

Datasheet:

IXBF42N300 Datasheet

ECAD Model:

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More Information

Learn more about IXYS IXBF42N300

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 57 Weeks Estimated factory production time.

Long lead time reported on this product.

Enter Quantity:

Minimum: 300 Multiples: 25

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp1.189.054	Rp356.716.200

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	ISOPLUS-i4-PAK-3
Tradename:	BIMOSFET
Packaging:	Tube
Brand:	IXYS
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Product Type:	MOSFETs
Factory Pack Quantity:	25
Subcategory:	Transistors
Unit Weight:	6,500 g

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Datasheet

IXBF42N300 Datasheet

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

High Voltage Reverse Conducting (BiMOSFET™) IGBTs

IXYS High Voltage Series 2500V to 3600V Reverse Conducting (BiMOSFET™) IGBTs combine the strength of both MOSFETs and IGBTs. These high-voltage devices feature a positive voltage temperature coefficient of both of its saturation voltage and the forward voltage drop of its intrinsic diode, making them ideal for parallel operation. The “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high L_di/dt voltage transients from inflicting damage to the device.