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IXBF55N300

Name: IXYS IXBF55N300
Brand: IXYS
SKU: 747-IXBF55N300
Price: 1817739 IDR
Availability: OutOfStock

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Mouser No:

747-IXBF55N300

Mfr. No:

IXBF55N300

Mfr.:

IXYS

Description:

IGBTs High Voltage High Gain BIMOSFET

Datasheet:

IXBF55N300 Datasheet

ECAD Model:

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Learn more about IXYS IXBF55N300

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Stock:: Non-Stocked

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Factory Lead Time:: 57 Weeks Estimated factory production time.

Long lead time reported on this product.

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Minimum: 300 Multiples: 25

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Ext. Price:

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp1.817.739	Rp545.321.700

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	ISOPLUS i4-PAC-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	3 kV
Collector-Emitter Saturation Voltage:	2.7 V
Maximum Gate Emitter Voltage:	- 25 V, 25 V
Continuous Collector Current at 25 C:	86 A
Pd - Power Dissipation:	357 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	Very High Voltage
Packaging:	Tube
Brand:	IXYS
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Gate-Emitter Leakage Current:	200 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	25
Subcategory:	IGBTs
Tradename:	BIMOSFET
Unit Weight:	5 g

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Datasheet

IXBF55N300 Datasheet

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

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