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IXFB100N50P

Name: IXYS IXFB100N50P
Brand: IXYS
SKU: 747-IXFB100N50P
Price: 576484.47 IDR
Availability: InStock

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Mouser No:

747-IXFB100N50P

Mfr. No:

IXFB100N50P

Mfr.:

IXYS

Description:

MOSFETs 100 Amps 500V 0.05 Ohms Rds

Datasheet:

IXFB100N50P Datasheet

ECAD Model:

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More Information

Learn more about IXYS IXFB100N50P

In Stock: 467

Stock:: 467

Can Dispatch Immediately

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On Order:: 300

Expected 18/05/2026
Factory Lead Time:: 37

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp576.484,47	Rp576.484,47
	Rp471.732,81	Rp4.717.328,10
	Rp408.321,27	Rp40.832.127,00
	Rp394.658,01	Rp197.329.005,00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	PLUS-264-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	500 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	49 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	240 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.25 kW
Channel Mode:	Enhancement
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	26 ns
Forward Transconductance - Min:	50 S
Product Type:	MOSFETs
Rise Time:	29 ns
Series:	IXFB100N50
Factory Pack Quantity:	25
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	110 ns
Typical Turn-On Delay Time:	36 ns
Unit Weight:	1,600 g

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Datasheet

IXFB100N50P Datasheet

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CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Polar HiPerFET Power MOSFETs

IXYS Polar™ HiPerFETs Power MOSFETs combine the strengths of the Polar Standard family with a faster body diode. The faster body diode's reverse recovery time (t_rr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of MOSFETs provides the lowest R_DS(on), low R_thJC, low Q_g, and enhanced dv/dt capability.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.