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IXFH86N30T

Name: IXYS IXFH86N30T
Brand: IXYS
SKU: 747-IXFH86N30T
Price: 215984.61 IDR
Availability: InStock

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Mouser No:

747-IXFH86N30T

Mfr. No:

IXFH86N30T

Mfr.:

IXYS

Description:

MOSFETs Trench HiperFET Power MOSFET

Datasheet:

IXFH86N30T Datasheet

ECAD Model:

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Learn more about IXYS IXFH86N30T

In Stock: 299

Stock:: 299 Can Dispatch Immediately

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Factory Lead Time:: 23 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp215.984,61	Rp215.984,61
	Rp130.151,31	Rp1.301.513,10
	Rp122.969,34	Rp14.756.320,80

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	300 V
Id - Continuous Drain Current:	86 A
Rds On - Drain-Source Resistance:	43 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	180 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	830 W
Channel Mode:	Enhancement
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	15 ns
Forward Transconductance - Min:	70 S
Product Type:	MOSFETs
Rise Time:	18 ns
Series:	IXFH86N30
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	54 ns
Typical Turn-On Delay Time:	16 ns
Unit Weight:	6 g

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Datasheet

IXFH86N30T Datasheet

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CNHTS:: 8541290000
TARIC:: 8541900000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 8541900299
ECCN:: EAR99

Gen1 Trench Gate Power MOSFETs

IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low R_DS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction temperature, from -40°C to 175°C, make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.