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IXFN140N20P

Name: IXYS IXFN140N20P
Brand: IXYS
SKU: 747-IXFN140N20P
Price: 506416.47 IDR
Availability: OutOfStock

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Mouser No:

747-IXFN140N20P

Mfr. No:

IXFN140N20P

Mfr.:

IXYS

Description:

MOSFET Modules 140 Amps 200V 0.018 Rds

Datasheet:

IXFN140N20P Datasheet

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Factory Lead Time:: 26 Weeks Estimated factory production time.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp506.416,47	Rp506.416,47
	Rp370.659,72	Rp3.706.597,20
	Rp315.831,51	Rp31.583.151,00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFET Modules
RoHS:
Technology:	Si
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	115 A
Rds On - Drain-Source Resistance:	18 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	680 W
Series:	IXFN140N20
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	90 ns
Height:	12.22 mm
Length:	38.23 mm
Product Type:	MOSFET Modules
Rise Time:	35 ns
Factory Pack Quantity:	10
Subcategory:	Discrete and Power Modules
Tradename:	HiPerFET
Type:	PolarHT HiPerFET Power MOSFET
Typical Turn-Off Delay Time:	150 ns
Typical Turn-On Delay Time:	30 ns
Width:	25.42 mm
Unit Weight:	30 g

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Datasheet

IXFN140N20P Datasheet

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CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Polar HiPerFET Power MOSFETs

IXYS Polar™ HiPerFETs Power MOSFETs combine the strengths of the Polar Standard family with a faster body diode. The faster body diode's reverse recovery time (t_rr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of MOSFETs provides the lowest R_DS(on), low R_thJC, low Q_g, and enhanced dv/dt capability.