+65 6788-9233

Part of the TTI Family of Specialists Contact Mouser (Singapore) +65 6788-9233 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IXFN160N30T

Name: IXYS IXFN160N30T
Brand: IXYS
SKU: 747-IXFN160N30T
Price: 555464 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

747-IXFN160N30T

Mfr. No:

IXFN160N30T

Mfr.:

IXYS

Description:

MOSFET Modules TRENCH HIPERFET PWR MOSFET 300V 130A

Datasheet:

IXFN160N30T Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about IXYS IXFN160N30T

In Stock: 308

Stock:: 308 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 23 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp555.464	Rp555.464
	Rp408.672	Rp4.086.720
	Rp354.719	Rp35.471.900
	Rp354.544	Rp177.272.000

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFET Modules
RoHS:
Technology:	Si
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	300 V
Id - Continuous Drain Current:	130 A
Rds On - Drain-Source Resistance:	19 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	900 W
Series:	IXFN160N30
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	25 ns
Height:	12.22 mm
Length:	38.23 mm
Product Type:	MOSFET Modules
Rise Time:	38 ns
Factory Pack Quantity:	10
Subcategory:	Discrete and Power Modules
Tradename:	HiPerFET
Type:	GigaMOS Power MOSFET
Typical Turn-Off Delay Time:	105 ns
Typical Turn-On Delay Time:	37 ns
Width:	25.42 mm
Unit Weight:	30 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IXFN160N30T Datasheet

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541900000
MXHTS:: 8541900299
ECCN:: EAR99

Gen1 Trench Gate Power MOSFETs

IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low R_DS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction temperature, from -40°C to 175°C, make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.