IXFN200N07

Name: IXYS IXFN200N07
Brand: IXYS
SKU: 747-IXFN200N07
Price: 853779 IDR
Availability: InStock

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Mouser No:

747-IXFN200N07

Mfr. No:

IXFN200N07

Mfr.:

IXYS

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

ECAD Model:

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Stock:: 197 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 197 will be subject to minimum order requirements.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFET Modules
RoHS:
Technology:	Si
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	70 V
Id - Continuous Drain Current:	200 A
Rds On - Drain-Source Resistance:	6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	520 W
Series:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	60 ns
Height:	9.6 mm
Length:	38.23 mm
Product Type:	MOSFET Modules
Rise Time:	60 ns
Factory Pack Quantity:	10
Subcategory:	Discrete and Power Modules
Tradename:	HyperFET
Typical Turn-Off Delay Time:	100 ns
Typical Turn-On Delay Time:	30 ns
Width:	25.42 mm
Unit Weight:	30 g