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IXTP170N13X4

Name: IXYS IXTP170N13X4
Brand: IXYS
SKU: 747-IXTP170N13X4
Price: 164485 IDR
Availability: OutOfStock

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Mouser No:

747-IXTP170N13X4

Mfr. No:

IXTP170N13X4

Mfr.:

IXYS

Description:

MOSFETs IXTP170N13X4

Datasheet:

IXTP170N13X4 Datasheet

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 27 Weeks Estimated factory production time.

Long lead time reported on this product.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp164.485	Rp49.345.500
	Rp145.391	Rp72.695.500

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	135 V
Id - Continuous Drain Current:	170 A
Rds On - Drain-Source Resistance:	6.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	105 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	480 W
Channel Mode:	Enhancement
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	7 ns
Forward Transconductance - Min:	70 S
Product Type:	MOSFETs
Rise Time:	8 ns
Series:	X4-Class
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	46 ns
Typical Turn-On Delay Time:	26 ns
Unit Weight:	2 g

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Datasheet

IXTP170N13X4 Datasheet

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Electric Vehicle Charging Solutions

Littelfuse Electric Vehicle (EV) Charging Solutions allow designers to select the ideal solution to ensure their EV charging units are functional and safe. Off-board EV charging stations operate in harsh environments subject to extreme heat and cold, rain, snow and lightning strikes. Littelfuse products protect against these hazards, minimising the risk of faults.

X4-Class 135V-200V Power MOSFETs

IXYS X4-Class 135V-200V Power MOSFETs are developed using a charge compensation principle and proprietary process technology. This technology results in Power MOSFETs with significantly reduced resistance R_DS(on) and gate charge Q_g. A low on-state resistance reduces the conduction losses and lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads and lowers gate drive requirements. These MOSFETs are also avalanche-rated and exhibit a superior dv/dt performance. Due to its positive temperature coefficient of on-state resistance, these MOSFETs can be operated in parallel to meet higher current requirements.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.