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LSIC1MO170E0750

Name: IXYS LSIC1MO170E0750
Brand: IXYS
SKU: 576-LSIC1MO170E0750
Price: 145391 IDR
Availability: InStock

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Mouser No:

576-LSIC1MO170E0750

Mfr. No:

LSIC1MO170E0750

Mfr.:

IXYS

Description:

SiC MOSFETs TO247 1.7KV 4.4A N-CH SIC

Datasheet:

LSIC1MO170E0750 Datasheet (PDF)

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Learn more about IXYS LSIC1MO170E0750

In Stock: 1.867

Stock:: 1.867 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp145.391	Rp145.391
	Rp85.483	Rp854.830
	Rp82.855	Rp8.285.500

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.7 kV
Id - Continuous Drain Current:	6.2 A
Rds On - Drain-Source Resistance:	1 Ohms
Vgs - Gate-Source Voltage:	- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	13 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	60 W
Channel Mode:	Enhancement
Brand:	IXYS
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Packaging:	Tube
Product Type:	SiC MOSFETS
Series:	LSIC1MO
Factory Pack Quantity:	450
Subcategory:	Transistors
Technology:	SiC

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Datasheet

LSIC1MO170E0750 Datasheet (PDF)

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CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

LSIC1MO170E0750 N-Channel SiC MOSFET

IXYS LSIC1MO170E0750 is a 750mΩ N-channel Silicon Carbide (SiC) MOSFET optimized for high-frequency and high-efficiency applications. The low gate resistance and ultra-low on-resistance make it suitable for high-frequency switching applications. This device features extremely low gate charge and output capacitance, as well as normally-off operations at all temperatures. The IXYS LSIC1MO170E0750 is suitable for a variety of applications that utilize high-frequency switching, such as switch-mode power supplies, solar inverters, UPS systems, high voltage DC-DC converters, and more.

SiC MOSFETs

Littelfuse SiC MOSFETs are optimized for high-frequency, high-efficiency applications. These robust SiC MOSFETs offer low gate charges, low output capacitance, and low gate resistance for high-frequency switching. These devices also feature extremely low drain-source on-state resistance. The low gate charge and on-resistance of these MOSFETs translate into lower conduction and switching losses, respectively. Littelfuse offers in-house designed, developed, and manufactured SiC MOSFETs with extremely low gate charge and output capacitance, industry-leading performance, and ruggedness at all temperatures. Littelfuse SiC MOSFETs are available in a range of varieties, including 1200V in 80mΩ, 120mΩ, and 160mΩ versions.