AIMDQ75R020M2HXTMA1

Infineon Technologies
726-AIMDQ75R020M2HXT
AIMDQ75R020M2HXTMA1

Mfr.:

Description:
SiC MOSFETs CoolSiC Automotive Power Device 750 V G2

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 35

Stock:
35 Can Dispatch Immediately
Factory Lead Time:
8 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp280.973 Rp280.973
Rp228.772 Rp2.287.720
Rp190.760 Rp19.076.000
Rp170.265 Rp85.132.500
Full Reel (Order in multiples of 750)
Rp159.930 Rp119.947.500
2.250 Quote

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
PG-HDSOP-22
N-Channel
1 Channel
750 V
86 A
25 mOhms
-7 V to + 23 V
4.5 V
59 nC
- 55 C
+ 175 C
340 W
Enhancement
CoolSiC
Brand: Infineon Technologies
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: AT
Fall Time: 7 ns
Forward Transconductance - Min: 27 S
Moisture Sensitive: Yes
Packaging: Reel
Packaging: Cut Tape
Product: SiC MOSFET
Product Type: SiC MOSFETS
Rise Time: 10 ns
Factory Pack Quantity: 750
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Type: Automotive Power Device
Typical Turn-Off Delay Time: 22 ns
Typical Turn-On Delay Time: 11 ns
Part # Aliases: AIMDQ75R020M2H SP006089223
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ECCN:
EAR99

CoolSiC™ Automotive 750V G2 MOSFETs

Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETs are engineered to meet the stringent demands of electric vehicle (EV) applications such as traction inverters, onboard chargers (OBC), and high-voltage DC/DC converters. These silicon carbide (SiC) MOSFETs deliver exceptional efficiency, power density, and thermal performance, enabling next-generation e-mobility systems. With a voltage rating of 750V and second-generation CoolSiC™ technology, these devices offer improved switching behavior and reduced losses compared to traditional silicon solutions. The portfolio includes a range of RDS(on) values from 9mΩ to 78mΩ, providing flexibility for designers to optimize conduction and switching performance.