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AIMZA75R033M2HXKSA1

Name: Infineon AIMZA75R033M2HXKSA1
Brand: Infineon Technologies
SKU: 726-AIMZA75R033M2HXK
Price: 224218 IDR
Availability: InStock

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Mouser No:

726-AIMZA75R033M2HXK

Mfr. No:

AIMZA75R033M2HXKSA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs Automotive SiC MOSFET, 750 V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

AIMZA75R033M2HXKSA1 Datasheet (PDF)

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In Stock: 25

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp224.218	Rp224.218
	Rp175.520	Rp1.755.200
	Rp146.267	Rp14.626.700
	Rp130.326	Rp65.163.000
	Rp121.568	Rp121.568.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
Mounting Style:	Through Hole
Package/Case:	PG-TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	47 A
Rds On - Drain-Source Resistance:	41.3 mOhms
Vgs - Gate-Source Voltage:	- 7 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	5.6 V
Qg - Gate Charge:	37 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	164 W
Channel Mode:	Enhancement
Tradename:	CoolSiC
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Fall Time:	7 ns
Forward Transconductance - Min:	16 S
Packaging:	Tube
Product:	Power MOSFET
Product Type:	SiC MOSFETS
Rise Time:	8 ns
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	CoolSiC Automotive Power Device
Typical Turn-Off Delay Time:	17 ns
Typical Turn-On Delay Time:	9 ns
Part # Aliases:	AIMZA75R033M2H SP006113276

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Datasheet

AIMZA75R033M2HXKSA1 Datasheet (PDF)

ECCN:: EAR99

CoolSiC™ Automotive 750V G2 MOSFETs

Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETs are engineered to meet the stringent demands of electric vehicle (EV) applications such as traction inverters, onboard chargers (OBC), and high-voltage DC/DC converters. These silicon carbide (SiC) MOSFETs deliver exceptional efficiency, power density, and thermal performance, enabling next-generation e-mobility systems. With a voltage rating of 750V and second-generation CoolSiC™ technology, these devices offer improved switching behavior and reduced losses compared to traditional silicon solutions. The portfolio includes a range of R_DS(on) values from 9mΩ to 78mΩ, providing flexibility for designers to optimize conduction and switching performance.