BFP 740F H6327

Infineon Technologies
726-BFP740FH6327
BFP 740F H6327

Mfr.:

Description:
RF Bipolar Transistors RF BIP TRANSISTOR

Datasheet:
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Learn more about Infineon Technologies BFP 740F H6327

In Stock: 8.824

Stock:
8.824 Can Dispatch Immediately
Factory Lead Time:
3 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
Rp19.094 Rp19.094
Rp11.894 Rp118.940
Rp7.743 Rp774.300
Rp5.973 Rp2.986.500
Rp5.395 Rp5.395.000
Full Reel (Order in multiples of 3000)
Rp4.887 Rp14.661.000
Rp4.362 Rp26.172.000
Rp4.327 Rp38.943.000
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:
BFP740FH6327XTSA1
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
Rp9.810
Min:
1

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: RF Bipolar Transistors
RoHS:  
BFP740
Bipolar
SiGe
42 GHz
4 V
1.2 V
30 mA
- 65 C
+ 150 C
SMD/SMT
TSFP-4
AEC-Q100
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: DE
Pd - Power Dissipation: 160 mW
Product Type: RF Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
Part # Aliases: SP000750416 BFP74FH6327XT BFP740FH6327XTSA1
Unit Weight: 1,870 mg
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Datasheet

Product Catalogs

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CNHTS:
8541210000
CAHTS:
8541290000
USHTS:
8541210095
JPHTS:
8541290100
KRHTS:
8541219000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

RF Transistors

Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

BFPx4 RF Transistors

Infineon BFPx4 RF Transistors provide the designer the best possible performance, superior flexibility and price/performance ratio. These are widely used for new emerging wireless applications, where the system specification is not yet firmly established. The BFxx Low Noise Amplifiers (LNAs) include devices suitable for use from AM over VHF/UHF up to 14GHz. These are the latest LNA innovations based on Infineon's reliable high volume 80GHz fT silicon germanium carbon (SiGe:C) heterojunction bipolar technology. They combine uncompromised RF performance with outstanding robustness against high RF input power overdrive and ESD.

RF Solutions for IoT applications

Infineon Technologies RF Solutions portfolio delivers high-performance RF technology products for reliable wireless connectivity in IoT applications. The number of IoT devices is growing at an astonishing rate. At the same time, customers expect a superior user experience in terms of product design and functionality.

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