S25FL128SAGMFIR00

Infineon Technologies
797-25FL128SAGMFIR00
S25FL128SAGMFIR00

Mfr.:

Description:
NOR Flash 128Mb 3V 133MHz Serial NOR Flash

Datasheet:
ECAD Model:
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Learn more about Infineon Technologies S25FL128SAGMFIR00

In Stock: 1.189

Stock:
1.189
Can Dispatch Immediately
On Order:
1.200
Factory Lead Time:
3
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp68.316 Rp68.316
Rp63.937 Rp639.370
Rp62.361 Rp1.559.025
Rp61.134 Rp3.056.700
Rp53.077 Rp5.307.700
Rp51.850 Rp12.962.500
Rp51.500 Rp25.750.000
Rp51.325 Rp61.590.000
Rp49.573 Rp118.975.200

Alternative Packaging

Mfr. Part No.:
S25FL128SAGMFIR01
Packaging:
Tube
Availability:
In Stock
Price:
Rp69.893
Min:
1
Mfr. Part No.:
S25FL128SAGMFIR03
Packaging:
Reel, Cut Tape
Availability:
In Stock
Price:
Rp69.893
Min:
1

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: NOR Flash
RoHS:  
SMD/SMT
SOIC-16
S25FL128S
128 Mbit
2.7 V
3.6 V
100 mA
SPI
133 MHz
16 M x 8
8 bit
Synchronous
- 40 C
+ 85 C
Tray
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Moisture Sensitive: Yes
Product Type: NOR Flash
Speed: 133 MHz
Factory Pack Quantity: 1200
Subcategory: Memory & Data Storage
Tradename: MirrorBit
Unit Weight: 200,700 mg
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Attributes selected: 0

Datasheet

EOL

CNHTS:
8542329090
CAHTS:
8542320040
USHTS:
8542320051
JPHTS:
8542320312
KRHTS:
8542321040
TARIC:
8542326100
MXHTS:
8542320299
ECCN:
3A991.b.1.a

FL Serial NOR Flash

Infineon Technologies FL Serial NOR Flash memory offers a reduced pin count for lower system cost while providing optimal read/write performance for various automotive, networking, consumer electronics, and industrial applications.

S25FL128S NOR Flash Memory Devices

Infineon Technologies S25FL128S FL-S NOR Flash Memory Devices are a 2.7V to 3.6V / 1.65V to 3.6V VIO Volt non-volatile memory using 65nm MIRRORBIT™ technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single-bit serial input and output (Single I/O or SIO), optional two-bit (Dual I/O or DIO), and four-bit (Quad I/O or QIO) serial commands. 

S25FL MIRRORBIT™ Flash Non-Volatile Memory

Infineon Technologies S25FL128S/S25FL256S MIRRORBIT™ Flash Non-Volatile Memory devices employ MIRRORBIT technology that stores two data bits in each memory array transistor. These Infineon devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. Infineon S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.

S25 MIRRORBIT™ Flash Non-Volatile Memory

Infineon Technologies S25 MIRRORBIT™ Flash Non-Volatile Memory uses MIRRORBIT technology, which stores two data bits in each memory array transistor; Eclipse architecture dramatically improves program and erase performance; and 65nm process lithography. This family of devices connect to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands. In addition, the FL-S family adds support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. The Eclipse architecture features a Page Programming Buffer that allows up to 128 words (256 bytes) or 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. Infineon S25 MIRRORBIT Flash Non-Volatile Memory is ideal for code shadowing, XIP, and data storage.

S25FLxS FL-S NOR Flash Memory Devices

Infineon Technologies S25FLxS FL-S NOR Flash Memory Devices are 2.7V to 3.6V or 1.65V to 3.6V VIO Volt Non-volatile Memory. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MIRRORBIT™ technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in more effective programming and erasing than prior generation SPI programs or erased algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.

FL Serial NOR Flash Memory

Infineon Technologies FL Serial NOR Flash Memory offers a reduced pin count while providing optimal read/write performance. This feature makes the FL Serial NOR Flash Memory optimal for automotive, networking, consumer electronics, and industrial applications. An AEC-Q100 qualification and PPAP support are available for automotive customers. The Infineon FL family has four product groups: FL-S, FL-L, FL1-K, and FL-P.

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