S80KS5122GABHI020

Infineon Technologies
727-S5122GABHI020
S80KS5122GABHI020

Mfr.:

Description:
DRAM SPCM

ECAD Model:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
338
Factory Lead Time:
26
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp171.842 Rp171.842
Rp159.755 Rp1.597.550
Rp150.821 Rp3.770.525
Rp147.493 Rp7.374.650
Rp137.684 Rp46.537.192

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: DRAM
RoHS:  
HyperRAM
512 Mbit
8 bit
200 MHz
FBGA-24
64 M x 8
35 ns
1.7 V
2 V
- 40 C
+ 85 C
Tray
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TH
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 338
Subcategory: Memory & Data Storage
Supply Current - Max: 44 mA
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CNHTS:
8542329010
USHTS:
8542320032
ECCN:
3A991.b.2

S80KS5122 & S80KS5123 HYPERRAM™ 2.0 Memory

Infineon Technologies S80KS5122 and S80KS5123 HYPERRAM™ 2.0 Memory is a high-speed, low-pin-count, low-power self-refresh Dynamic RAM (DRAM) for high-performance embedded systems requiring expansion memory for scratchpad or buffering purposes. HYPERRAM products support JEDEC JESD251 profile compliant HYPERBUS™ and Octal xSPI interfaces that draw upon the legacy features of both parallel and serial interface memories while enhancing system performance and ease of design as reducing system cost. The low-pin count architecture makes HYPERRAM especially suitable for power and board space-constrained applications requiring off-chip external RAM.