AT28C256F-15LM/883

Microchip Technology
556-A28C256F15LM883
AT28C256F-15LM/883

Mfr.:

Description:
EEPROM 256K FAST PROG SDP - 150NS
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Datasheet:
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Learn more about Microchip Technology AT28C256F-15LM/883
This product may require additional documentation to export from the United States.

In Stock: 25

Stock:
25 Can Dispatch Immediately
Factory Lead Time:
9 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-,--
Ext. Price:
Rp-,--
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp4.367.513,61 Rp4.367.513,61
Rp4.203.729,66 Rp105.093.241,50
102 Quote

Product Attribute Attribute Value Select Attribute
Microchip
Product Category: EEPROM
Delivery Alerts:
 This product may require additional documentation to export from the United States.
RoHS:  
256 kbit
Parallel
32 k x 8
LCC-32
150 ns
4.5 V
5.5 V
SMD/SMT
10 Year
- 55 C
+ 125 C
AT28C256
Tube
Active Read Current - Max: 50 mA
Brand: Microchip Technology
Country of Assembly: Not Available
Country of Diffusion: US
Country of Origin: TH
Operating Supply Voltage: 5 V
Output Enable Access Time: 70 ns
Product Type: EEPROM
Factory Pack Quantity: 34
Subcategory: Memory & Data Storage
Supply Current - Max: 50 mA
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CNHTS:
8542319000
CAHTS:
8542320040
USHTS:
8542320051
JPHTS:
8542320393
KRHTS:
8542321090
TARIC:
8542327500
MXHTS:
8542320299
ECCN:
3A001.a.2.c

AT28C256 256K EEPROM Memory

Microchip AT28C256 256K EEPROM Memory devices are high-performance, Electrically Erasable, and Programmable Read-only Memory (EEPROM). The EEPROM 256K of memory is organized as 32,768 words by 8-bits. These devices are manufactured with Atmel's advanced non-volatile CMOS technology, offering 150ns access time with 440mW power dissipation. The AT28C256 memory devices are accessed like static RAM for reading or writing cycles without needing external components. These AT28C256 devices contain a 64-byte page register to allow writing up to 64 bytes. The EEPROM devices utilize an internal error correction for extended endurance and improved data retention. 

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