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MSC015SMA070B4

Name: Microchip MSC015SMA070B4
Brand: Microchip Technology
SKU: 494-MSC015SMA070B4
Price: 337727.76 IDR
Availability: InStock

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Mouser No:

494-MSC015SMA070B4

Mfr. No:

MSC015SMA070B4

Mfr.:

Microchip Technology

Description:

SiC MOSFETs MOSFET SIC 700 V 15 mOhm TO-247-4

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Datasheet:

MSC015SMA070B4 Datasheet (PDF)

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Learn more about Microchip Technology MSC015SMA070B4

In Stock: 150

Stock:: 150 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp337.727,76	Rp337.727,76
	Rp314.780,49	Rp3.147.804,90
	Rp273.965,88	Rp8.218.976,40
	Rp273.790,71	Rp32.854.885,20

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	700 V
Id - Continuous Drain Current:	112 A
Rds On - Drain-Source Resistance:	19 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	1.9 V
Qg - Gate Charge:	215 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	524 W
Channel Mode:	Enhancement
Brand:	Microchip Technology
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	12 ns
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	22 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	40 ns
Typical Turn-On Delay Time:	27 ns
Unit Weight:	6 g

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Datasheet

MSC015SMA070B4 Datasheet (PDF)

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PCN

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.