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MSC017SMA120B4

Name: Microchip MSC017SMA120B4
Brand: Microchip Technology
SKU: 579-MSC017SMA120B4
Price: 839940 IDR
Availability: InStock

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Mouser No:

579-MSC017SMA120B4

Mfr. No:

MSC017SMA120B4

Mfr.:

Microchip Technology

Description:

SiC MOSFETs MOSFET SIC 1200 V 17 mOhm TO-247-4

Datasheet:

MSC017SMA120B4 Datasheet (PDF)

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Learn more about Microchip Technology MSC017SMA120B4

In Stock: 30

Stock:: 30 Can Dispatch Immediately

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Factory Lead Time:: 3 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp839.940	Rp839.940
	Rp774.427	Rp23.232.810
	Rp673.879	Rp80.865.480

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Screw Mount
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	113 A
Rds On - Drain-Source Resistance:	17.6 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	2.7 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	455 W
Brand:	Microchip Technology
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	18 ns
Packaging:	Tube
Product:	SiC MOSFET Modules
Product Type:	SiC MOSFETS
Rise Time:	13 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	51 ns
Typical Turn-On Delay Time:	29 ns

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Datasheet

MSC017SMA120B4 Datasheet (PDF)

PCN

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

MSC017SMA120x Silicon Carbide N-Ch Power MOSFETs

Microchip Technology MSC017SMA120x Silicon Carbide N-Ch Power MOSFETs increase the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost in high-voltage applications. The Microchip MSC017SMA120x SiC MOSFETs provide high efficiency to enable a lighter, more compact system with improved thermal capabilities and lower switching losses.