It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

MSC025SMA120B

Name: Microchip MSC025SMA120B
Brand: Microchip Technology
SKU: 494-MSC025SMA120B
Price: 702957.21 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

494-MSC025SMA120B

Mfr. No:

MSC025SMA120B

Mfr.:

Microchip Technology

Description:

SiC MOSFETs MOSFET SIC 1200 V 25 mOhm TO-247

View in Development Tools Selector

Datasheet:

MSC025SMA120B Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Microchip Technology MSC025SMA120B

In Stock: 132

Stock:: 132 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 11 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-,--

Ext. Price:

Rp-,--

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp702.957,21	Rp702.957,21
	Rp648.304,17	Rp19.449.125,10
	Rp564.047,40	Rp67.685.688,00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	113 A
Rds On - Drain-Source Resistance:	31 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	1.9 V
Qg - Gate Charge:	232 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	577 W
Channel Mode:	Enhancement
Brand:	Microchip Technology
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	25 ns
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	15 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	38 ns
Typical Turn-On Delay Time:	63 ns
Unit Weight:	6 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

MSC025SMA120B Datasheet (PDF)

DTS

View in Development Tools Selector

PCN

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Silicon Carbide (SiC) Semiconductors

Microchip Technology Silicon Carbide (SiC) Semiconductors are an innovative option for power electronic designers looking to improve system efficiency, smaller form factor, and higher operating temperature in products covering industrial, medical, military/aerospace, aviation, and communication market segments. Microchip's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive Unclamped Inductive Switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10J/cm² to 15J/cm² and robust short-circuit protection at 3ms to 5ms. The Microchip Technology SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse currents for lower switching loss. In addition, SiC MOSFET and SiC SBD can be paired together for use in modules.

Silicon Carbide (SiC) MOSFETs

Microchip Technology Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs. These MOSFETs have low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs can stabilize operation at 175°C high junction temperature. These MOSFETs provide high efficiency with low switching losses. The SiC MOSFETs do not require any freewheeling diodes. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply and distribution.