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MSC035SMA170B

Name: Microchip MSC035SMA170B
Brand: Microchip Technology
SKU: 494-MSC035SMA170B
Price: 710665 IDR
Availability: OutOfStock

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Mouser No:

494-MSC035SMA170B

Mfr. No:

MSC035SMA170B

Mfr.:

Microchip Technology

Description:

SiC MOSFETs MOSFET SIC 1700 V 35 mOhm TO-247

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Datasheet:

MSC035SMA170B Datasheet (PDF)

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp710.665	Rp710.665
	Rp655.311	Rp19.659.330
	Rp570.354	Rp68.442.480

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.7 kV
Id - Continuous Drain Current:	68 A
Rds On - Drain-Source Resistance:	45 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Qg - Gate Charge:	178 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	370 W
Channel Mode:	Enhancement
Brand:	Microchip Technology
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	17 ns
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	10 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	15 ns
Typical Turn-On Delay Time:	9 ns
Unit Weight:	6 g

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Datasheet

MSC035SMA170B Datasheet (PDF)

DTS

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PCN

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.