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PCDD10120G1_L2_00001

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Mouser No:

241-PCDD10120G1L2001

Mfr. No:

PCDD10120G1_L2_00001

Mfr.:

Panjit

Description:

SiC Schottky Diodes 1200V SiC Schottky Barrier Diode

Datasheet:

PCDD10120G1_L2_00001 Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Panjit
Product Category:	SiC Schottky Diodes
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TO-252AA-3
Configuration:	Single
If - Forward Current:	10 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.5 V
Ifsm - Forward Surge Current:	640 A
Ir - Reverse Current:	6 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	SiC Gen.1
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Panjit
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Pd - Power Dissipation:	200 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	3000
Subcategory:	Diodes & Rectifiers
Unit Weight:	321,700 mg

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Filter Document:

CAHTS:: 8541100090
USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

SiC Schottky Barrier Diodes

PANJIT SiC Schottky Barrier Diodes provide zero reverse recovery current, low forward voltage drop, and temperature-independent switching behavior. The devices have a high surge current capability, and excellent thermal performance. Silicon carbide technology provides lower conduction losses. The diodes can deliver stability and high ruggedness throughout -55°C to +175°C operating temperature range.