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Mfr.	Mfr. No:	Qty	Ext Total

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SCT027TO65G3

STMicroelectronics

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See Product Specifications

Mouser No:

511-SCT027TO65G3

Mfr. No:

SCT027TO65G3

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in a TO-LL package

Complete Your Design

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SCT027TO65G3 Datasheet (PDF)

ECAD Model:

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 20 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 1800 Multiples: 1800

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 1800)
	Rp148.544	Rp267.379.200

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	Not Available
Packaging:	Reel
Product Type:	SiC MOSFETS
Factory Pack Quantity:	1800
Subcategory:	Transistors

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Datasheet

SCT027TO65G3 Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

FEATURED PRODUCTS

STMICROELECTRONICS

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Developed using ST's advanced and innovative 2nd/3rd generation SiC MOSFET technology.

SCTH40N120G2V7AG Silicon Carbide Power MOSFET

Developed with advanced and innovative second-generation SiC MOSFET technology.

650V 3rd Gen SiC MOSFETs

Features low R_DS(on) per area, even at high temperatures, and excellent switching performance.

Silicon Carbide Power MOSFETs

Bring the advanced efficiency and reliability of wide bandgap materials to a broader range.