SCTW100N65G2AG

STMicroelectronics
511-SCTW100N65G2AG
SCTW100N65G2AG

Mfr.:

Description:
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
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Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
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In Stock: 281

Stock:
281 Can Dispatch Immediately
Factory Lead Time:
17 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 281 will be subject to minimum order requirements.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp604.161 Rp604.161
Rp450.537 Rp4.505.370

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
Through Hole
HiP-247-3
N-Channel
1 Channel
650 V
100 A
69 mOhms
- 10 V, + 22 V
5 V
162 nC
- 55 C
+ 200 C
420 W
Enhancement
AEC-Q101
Brand: STMicroelectronics
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Packaging: Tube
Product Type: SiC MOSFETS
Series: SCTW100N65G2AG
Factory Pack Quantity: 600
Subcategory: Transistors
Technology: SiC
Unit Weight: 4,500 g
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Attributes selected: 0

CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

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