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STB37N60DM2AG

Name: STMicroelectronics STB37N60DM2AG
Brand: STMicroelectronics
SKU: 511-STB37N60DM2AG
Price: 134530.56 IDR
Availability: InStock

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Mouser No:

511-STB37N60DM2AG

Mfr. No:

STB37N60DM2AG

Mfr.:

STMicroelectronics

Description:

MOSFETs Automotive-grade N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET i

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Datasheet:

STB37N60DM2AG Datasheet (PDF)

ECAD Model:

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In Stock: 2.045

Stock:: 2.045 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+Rp98.000,00)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp134.530,56	Rp134.530,56
	Rp91.613,91	Rp916.139,10
	Rp70.068,00	Rp7.006.800,00
Full Reel (Order in multiples of 1000)
	Rp65.338,41	Rp65.338.410,00

† A MouseReel™ fee of Rp98.000,00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	28 A
Rds On - Drain-Source Resistance:	110 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	54 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	210 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	MDmesh
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	CN
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	10.7 ns
Product Type:	MOSFETs
Rise Time:	17 ns
Series:	STB37N60DM2AG
Factory Pack Quantity:	1000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	68 ns
Typical Turn-On Delay Time:	21.2 ns
Unit Weight:	4 g

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Datasheet

STB37N60DM2AG Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Automotive-Grade N-Channel MDmesh DM2 MOSFETs

STMicroelectronics Automotive-Grade N-Channel MDmesh DM2 Power MOSFETs are high-voltage with very low recovery charge (Qrr) and time (trr) combined with low R_DS(on). They are suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.