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STD80N450K6

Name: STMicroelectronics STD80N450K6
Brand: STMicroelectronics
SKU: 511-STD80N450K6
Price: 72345.21 IDR
Availability: InStock

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Mouser No:

511-STD80N450K6

Mfr. No:

STD80N450K6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 800 V, 380 mOhm typ., 10 A MDmesh K6 Power MOSFET in a DPAK package

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Datasheet:

STD80N450K6 Datasheet (PDF)

ECAD Model:

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In Stock: 816

Stock:: 816 Can Dispatch Immediately

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+Rp98.000,00)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp72.345,21	Rp72.345,21
	Rp47.646,24	Rp476.462,40
	Rp33.632,64	Rp3.363.264,00
	Rp30.479,58	Rp15.239.790,00
	Rp28.727,88	Rp28.727.880,00
Full Reel (Order in multiples of 2500)
	Rp28.377,54	Rp70.943.850,00

† A MouseReel™ fee of Rp98.000,00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	450 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	17.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	83 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	12.7 ns
Product Type:	MOSFETs
Rise Time:	4 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Typical Turn-Off Delay Time:	28.8 ns
Typical Turn-On Delay Time:	10.6 ns
Unit Weight:	330 mg

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Datasheet

STD80N450K6 Datasheet (PDF)

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Product Change Notification 2025-5-3 (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.

STD80N450K6 800V 10A MDmesh K6 Power MOSFET

STMicroelectronics STD80N450K6 800V 10A MDmesh K6 Power MOSFET is a high voltage N-channel Power MOSFET featuring Zener protection and 100% avalanche. This MOSFET also features ultra-low gate charge, ±30V gate-source voltage, 83W total power dissipation, worldwide R_DS(ON) x area, and worldwide Figure Of Merit (FOM). The MOSFET operates from -55°C to 150°C junction temperature range and is available in DPAK (TO-252) type A2 package. Typical applications include flyback converters, LED lighting, and adapters for tablets, and notebooks.