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STD80N4F6

Name: STMicroelectronics STD80N4F6
Brand: STMicroelectronics
SKU: 511-STD80N4F6
Price: 39764 IDR
Availability: InStock

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Mouser No:

511-STD80N4F6

Mfr. No:

STD80N4F6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-Ch 40V 80A STripFET VI DeepGate

Complete Your Design

Datasheet:

STD80N4F6 Datasheet (PDF)

ECAD Model:

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In Stock: 2.957

Stock:: 2.957 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp39.764	Rp39.764
	Rp25.575	Rp255.750
	Rp17.307	Rp1.730.700
	Rp13.821	Rp6.910.500
	Rp13.138	Rp13.138.000
Full Reel (Order in multiples of 2500)
	Rp12.507	Rp31.267.500

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	80 A
Rds On - Drain-Source Resistance:	6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	36 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	70 W
Channel Mode:	Enhancement
Qualification:	AEC-Q100
Tradename:	STripFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	11.9 ns
Product Type:	MOSFETs
Rise Time:	7.6 ns
Series:	STD80N4F6
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	46.1 ns
Typical Turn-On Delay Time:	10.5 ns
Unit Weight:	330 mg

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Datasheet

STD80N4F6 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

STripFET VI™ Power MOSFETs

STMicroelectronics STripFET VI™ Power MOSFETs are enhancement-mode MOSFETs that benefit from STMicroelectronics proprietary STripFET technology with an updated gate structure. The resulting STripFET Power MOSFET uses a trench technology for high efficiency and low R_DS(on) required by various automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers, and solar. These STMicroelectronics MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.

AEC-Q101 Qualified STripFET Power MOSFETs

STMicroelectronics AEC-Q101 Qualified STripFET Power MOSFETs utilize ST's proprietary trench-based low voltage technology, achieving extremely low conduction losses. These STMicroelectronics power MOSFETs minimize the energy normally lost in electrical drives, leading to greater efficiency and making them suitable for many applications. Housed in industry-standard TO-252 and TO-263 SMD packages with R_DS(on) ranging from 3mΩ to 12.5mΩ, these devices perform well in most low-voltage automotive applications. This product range includes both standard and logic-level thresholds.

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R_DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.