STDRIVEG210Q

STMicroelectronics
511-STDRIVEG210Q
STDRIVEG210Q

Mfr.:

Description:
Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches 220V
Complete Your Design

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about STMicroelectronics STDRIVEG210Q

In Stock: 666

Stock:
666 Can Dispatch Immediately
Factory Lead Time:
52 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp46.595 Rp46.595
Rp34.859 Rp348.590
Rp31.881 Rp797.025
Rp28.553 Rp2.855.300
Rp26.976 Rp6.744.000
Rp25.925 Rp12.703.250
Rp25.049 Rp24.548.020
Rp23.823 Rp70.039.620

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Gate Drivers
Half-Bridge
SMD/SMT
QFN-18
2 Driver
2 Output
1.05 A, 2.4 A
9.2 V
18 V
22 ns
11 ns
- 40 C
+ 125 C
Tray
Brand: STMicroelectronics
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TH
Input Voltage - Max: 20 V
Input Voltage - Min: 3 V
Maximum Turn-Off Delay Time: 60 ns
Maximum Turn-On Delay Time: 60 ns
Moisture Sensitive: Yes
Operating Supply Current: 920 uA
Output Voltage: 220 V
Product Type: Gate Drivers
Propagation Delay - Max: 60 ns
Rds On - Drain-Source Resistance: 7 Ohms
Shutdown: Shutdown
Factory Pack Quantity: 490
Subcategory: PMIC - Power Management ICs
Technology: GaN
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

This functionality requires JavaScript to be enabled.

USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

STDRIVEG600/210/211 Half-Bridge Gate Drivers

STMicroelectronics STDRIVEG600 and STDRIVEG210/211 Half-Bridge Gate Drivers are single-chip half-bridge gate drivers for GaN (Gallium Nitride) eHEMTs (Enhancement-mode High-Electron-Mobility Transistors) or N-channel power MOSFETs. The high side of the STDRIVEG600 is designed to withstand voltages up to 600V and is suitable for designs with bus voltage up to 500V. These devices are ideal for driving high-speed GaN and silicon FETs due to high current capability, short propagation delay, and operation with a supply voltage down to 5V.

STDRIVEG210 Half-Bridge Gate Drivers

STMicroelectronics STDRIVEG210 Half-Bridge Gate Drivers are designed for N‑channel enhancement mode GaN, and the high-side driver section can withstand a voltage rail up to 220V. These drivers feature high current capability, short propagation delay with excellent delay matching, and integrated LDOs. This makes them optimized for driving high-speed GaN. The STDRIVEG210 half-bridge gate drivers feature supply UVLOs tailored to fast startup and low-consumption soft-switching applications. The high-side regulator is characterized by a very short wake-up time to maximize the application efficiency during intermittent operation (burst mode). These drivers offer an extended range for input pins that allows easy interfacing with controllers. A standby pin allows for reducing the power consumption during inactive periods or burst mode. Applications include DC/DC, AC/DC, resonant converters, synchronous rectification, UPS, adapters, LED lighting, and USB-C.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.