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STDRIVEG211Q

Name: STMicroelectronics STDRIVEG211Q
Brand: STMicroelectronics
SKU: 511-STDRIVEG211Q
Price: 46595.22 IDR
Availability: InStock

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Mouser No:

511-STDRIVEG211Q

Mfr. No:

STDRIVEG211Q

Mfr.:

STMicroelectronics

Description:

Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches 220V

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Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

STDRIVEG211Q Datasheet (PDF)

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In Stock: 664

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Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp46.595,22	Rp46.595,22
	Rp34.858,83	Rp348.588,30
	Rp31.880,94	Rp797.023,50
	Rp28.552,71	Rp2.855.271,00
	Rp26.976,18	Rp6.744.045,00
	Rp25.925,16	Rp12.703.328,40
	Rp25.049,31	Rp24.548.323,80
	Rp23.823,12	Rp70.039.972,80

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	Gate Drivers
RoHS:
Product:	Gate Drivers
Type:	Half-Bridge
Mounting Style:	SMD/SMT
Package/Case:	QFN-18
Number of Drivers:	2 Driver
Number of Outputs:	3 Output
Output Current:	1 A, 2.4 A
Supply Voltage - Min:	3.3 V
Supply Voltage - Max:	20 V
Configuration:	Inverting
Rise Time:	22 ns
Fall Time:	11 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Tray
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Development Kit:	EVLSTDRIVEG611
Moisture Sensitive:	Yes
Operating Supply Current:	1.02 nA
Output Voltage:	220 V
Product Type:	Gate Drivers
Propagation Delay - Max:	60 ns
Rds On - Drain-Source Resistance:	7 Ohms
Shutdown:	Shutdown
Factory Pack Quantity:	490
Subcategory:	PMIC - Power Management ICs
Technology:	GaN

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Datasheet

STDRIVEG211Q Datasheet (PDF)

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USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

STDRIVEG600/210/211 Half-Bridge Gate Drivers

STMicroelectronics STDRIVEG600 and STDRIVEG210/211 Half-Bridge Gate Drivers are single-chip half-bridge gate drivers for GaN (Gallium Nitride) eHEMTs (Enhancement-mode High-Electron-Mobility Transistors) or N-channel power MOSFETs. The high side of the STDRIVEG600 is designed to withstand voltages up to 600V and is suitable for designs with bus voltage up to 500V. These devices are ideal for driving high-speed GaN and silicon FETs due to high current capability, short propagation delay, and operation with a supply voltage down to 5V.

STDRIVEG211 Half-Bridge Gate Drivers

STMicroelectronics STDRIVEG211 Half-Bridge Gate Drivers are designed for N‑channel enhancement mode GaN, and the high-side driver section can withstand a voltage rail up to 220V. These drivers feature high current capability, short propagation delay with excellent delay matching, and integrated LDOs. This makes them optimized for driving high-speed GaN. The STDRIVEG211 half-bridge gate drivers feature supply UVLOs tailored to hard switching applications, interlocking to avoid cross-conduction conditions, and an overcurrent comparator with SmartSD. These drivers offer an extended range for input pins that allows easy interfacing with controllers. A standby pin allows for reducing the power consumption during inactive periods or burst mode. Applications include solar micro inverters, Class D audio amplifiers, E-bikes, LED lighting, USB-C, power tools, and robotics.