STDRIVEG212QTR

STMicroelectronics
511-STDRIVEG212QTR
STDRIVEG212QTR

Mfr.:

Description:
Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches
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Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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In Stock: 613

Stock:
613 Can Dispatch Immediately
Factory Lead Time:
52 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-,--
Ext. Price:
Rp-,--
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp67.615,62 Rp67.615,62
Rp60.783,99 Rp607.839,90
Rp52.025,49 Rp1.300.637,25
Rp46.770,39 Rp4.677.039,00
Rp39.062,91 Rp9.765.727,50
Rp37.661,55 Rp18.830.775,00
Rp31.530,60 Rp31.530.600,00
Full Reel (Order in multiples of 3000)
Rp26.625,84 Rp79.877.520,00

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Gate Driver
Half-Bridge
SMD/SMT
QFN-18
2 Driver
3 Output
1.8 A
10.3 V
18 V
Inverting, Non-Inverting
22 ns
13 ns
- 40 C
+ 125 C
Reel
Cut Tape
Brand: STMicroelectronics
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TH
Development Kit: EVLSTDRIVEG212
Maximum Turn-Off Delay Time: 65 ns
Maximum Turn-On Delay Time: 65 ns
Moisture Sensitive: Yes
Operating Supply Current: 900 uA
Output Voltage: 220 V
Product Type: Gate Drivers
Propagation Delay - Max: 65 ns
Rds On - Drain-Source Resistance: 4.8 Ohms
Shutdown: Shutdown
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Technology: GaN
Tradename: STDRIVE
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Attributes selected: 0

Datasheet

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USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

STDRIVEG212 220V Half-Bridge Gate Driver

STMicroelectronics STDRIVEG212 220V High-Speed Half-Bridge Gate Driver is optimized for 5V driving enhanced-mode GaN HEMTs. The high-side driver section is designed to support a voltage rail of up to 220V and can be easily supplied by the integrated bootstrap diode. High-current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG212 optimized for driving high-speed GaN.

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