STDRIVEG611QTR

STMicroelectronics
511-STDRIVEG611QTR
STDRIVEG611QTR

Mfr.:

Description:
Gate Drivers High voltage, high-speed half-bridge gate driver for GaN power switches
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Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
20 Weeks Estimated factory production time.
Minimum: 3000   Multiples: 3000
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 3000)
Rp27.502 Rp82.506.000
Rp27.151 Rp162.906.000

Alternative Packaging

Mfr. Part No.:
STDRIVEG611Q
Packaging:
Tray
Availability:
In Stock
Price:
Rp52.726
Min:
1

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Gate Drivers
Half-Bridge
SMD/SMT
QFN-18
2 Driver
3 Output
10.6 V
18 V
Inverting, Non-Inverting
11 ns
22 ns
- 40 C
+ 125 C
Reel
Brand: STMicroelectronics
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: SG
Input Voltage - Max: 20 V
Input Voltage - Min: 3.3 V
Maximum Turn-Off Delay Time: 60 ns
Maximum Turn-On Delay Time: 60 ns
Moisture Sensitive: Yes
Output Voltage: 520 V
Product Type: Gate Drivers
Propagation Delay - Max: 60 ns
Rds On - Drain-Source Resistance: 7 Ohms
Shutdown: Shutdown
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Technology: GaN
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Attributes selected: 0

Datasheet

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STDRIVEG611 Half-Bridge Gate Driver

STMicroelectronics STDRIVEG611 Half-Bridge Gate Driver is a high-voltage half-bridge gate driver for N-channel Enhancement Mode GaN. The high-side driver section is designed to stand a voltage rail up to 600V and can be easily supplied by the integrated bootstrap diode. High current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG611 optimized for driving high-speed GaN.

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