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STF2N80K5

Name: STMicroelectronics STF2N80K5
Brand: STMicroelectronics
SKU: 511-STF2N80K5
Price: 35034 IDR
Availability: InStock

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Mouser No:

511-STF2N80K5

Mfr. No:

STF2N80K5

Mfr.:

STMicroelectronics

Description:

MOSFETs N-CH 800V 3.5Ohm typ 2A Zener-protected

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Datasheet:

STF2N80K5 Datasheet (PDF)

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In Stock: 207

Stock:: 207 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp35.034,00	Rp35.034,00
	Rp16.991,49	Rp169.914,90
	Rp14.924,48	Rp1.492.448,00
	Rp12.051,70	Rp6.025.850,00
	Rp11.053,23	Rp11.053.230,00
	Rp9.581,80	Rp19.163.600,00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Mounting Style:	Through Hole
Series:	STF2N80K5
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Id - Continuous Drain Current:	2 A
Maximum Operating Temperature:	+ 150 C
Minimum Operating Temperature:	- 55 C
Number of Channels:	1 Channel
Package/Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	25 W
Product Type:	MOSFETs
Qg - Gate Charge:	3 nC
Rds On - Drain-Source Resistance:	3.5 Ohms
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Unit Weight:	2 g

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Datasheet

STF2N80K5 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

MDmesh K5 Power MOSFETs

STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best R_DS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.