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STGD4M65DF2

Name: STMicroelectronics STGD4M65DF2
Brand: STMicroelectronics
SKU: 511-STGD4M65DF2
Price: 26626 IDR
Availability: OutOfStock

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Mouser No:

511-STGD4M65DF2

Mfr. No:

STGD4M65DF2

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss

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Datasheet:

STGD4M65DF2 Datasheet (PDF)

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Availability

Stock:: 0

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Factory Lead Time:: 14 Weeks Estimated factory production time.

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Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp26.626	Rp26.626
	Rp16.781	Rp167.810
	Rp11.141	Rp1.114.100
	Rp8.811	Rp4.405.500
Full Reel (Order in multiples of 2500)
	Rp7.077	Rp17.692.500

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	DPAK-3 (TO-252-3)
Mounting Style:	SMD/SMT
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.6 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	8 A
Pd - Power Dissipation:	68 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGD4M65DF2
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	8 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Gate-Emitter Leakage Current:	250 uA
Product Type:	IGBT Transistors
Factory Pack Quantity:	2500
Subcategory:	IGBTs
Unit Weight:	330 mg

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Datasheet

STGD4M65DF2 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive V_CE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.