STGP20M65DF2

STMicroelectronics
511-STGP20M65DF2
STGP20M65DF2

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT M series, 650 V 20 A low loss
Complete Your Design

Datasheet:
ECAD Model:
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In Stock: 747

Stock:
747 Can Dispatch Immediately
Factory Lead Time:
15 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-,--
Ext. Price:
Rp-,--
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp46.595,22 Rp46.595,22
Rp24.348,63 Rp243.486,30
Rp22.071,42 Rp2.207.142,00
Rp18.042,51 Rp9.021.255,00
Rp17.271,76 Rp17.271.760,00

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-220-3
Through Hole
Single
650 V
1.55 V
- 20 V, 20 V
40 A
166 W
- 55 C
+ 175 C
STGP20M65DF2
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 40 A
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Gate-Emitter Leakage Current: 250 uA
Product Type: IGBT Transistors
Factory Pack Quantity: 1000
Subcategory: IGBTs
Unit Weight: 1,800 g
Products found:
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Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

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