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STGP30H65DFB2

Name: STMicroelectronics STGP30H65DFB2
Brand: STMicroelectronics
SKU: 511-STGP30H65DFB2
Price: 18218 IDR
Availability: Discontinued

Mouser No:

511-STGP30H65DFB2

Mfr. No:

STGP30H65DFB2

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a TO-220 packag

Complete Your Design

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

STGP30H65DFB2 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about STMicroelectronics STGP30H65DFB2

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 15 Weeks Estimated factory production time.

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Minimum: 1000 Multiples: 1000

Unit Price:

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Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp18.218	Rp18.218.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Packaging:	Tube
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	IGBT Transistors
Factory Pack Quantity:	1000
Subcategory:	IGBTs

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Datasheet

STGP30H65DFB2 Datasheet (PDF)

PCN

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

IGBT V Series

STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.