STGW25H120F2

STMicroelectronics
511-STGW25H120F2
STGW25H120F2

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
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Datasheet:
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In Stock: 617

Stock:
617 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-,--
Ext. Price:
Rp-,--
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp110.357,10 Rp110.357,10
Rp64.988,07 Rp649.880,70
Rp52.200,66 Rp5.220.066,00

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-247-3
Through Hole
Single
1.2 kV
2.1 V
- 20 V, 20 V
50 A
375 W
- 55 C
+ 175 C
STGW25H120F2
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 25 A
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 600
Subcategory: IGBTs
Unit Weight: 38 g
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Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (VCE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

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