STGW50H65DFB2-4

STMicroelectronics
511-STGW50H65DFB2-4
STGW50H65DFB2-4

Mfr.:

Description:
IGBTs Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO247-4 pac
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Datasheet:
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In Stock: 564

Stock:
564 Can Dispatch Immediately
Factory Lead Time:
15 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 564 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
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Ext. Price:
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Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp92.840 Rp92.840
Rp52.551 Rp525.510
Rp39.588 Rp3.958.800

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
Through Hole
Single
650 V
1.55 V
- 20 V, 20 V
86 A
272 W
- 55 C
+ 175 C
Tube
Brand: STMicroelectronics
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Product Type: IGBT Transistors
Factory Pack Quantity: 600
Subcategory: IGBTs
Unit Weight: 4,430 g
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Attributes selected: 0

Datasheet

PCN

USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.

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