+65 6788-9233

Part of the TTI Family of Specialists Contact Mouser (Singapore) +65 6788-9233 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

STGW75H65DFB2-4

Name: STMicroelectronics STGW75H65DFB2-4
Brand: STMicroelectronics
SKU: 511-STGW75H65DFB2-4
Price: 101774 IDR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

511-STGW75H65DFB2-4

Mfr. No:

STGW75H65DFB2-4

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 pac

Complete Your Design

Datasheet:

STGW75H65DFB2-4 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STGW75H65DFB2-4

Availability

Stock:: 0

You can still purchase this product for backorder.

An unexpected error occurred. Please try again later.
Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp101.774	Rp101.774
	Rp72.696	Rp726.960
	Rp71.294	Rp7.129.400

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.55 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	115 A
Pd - Power Dissipation:	357 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs
Unit Weight:	4,430 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STGW75H65DFB2-4 Datasheet (PDF)

PCN

Product Change Notification 2025-5-3 (PDF)

CNHTS:: 8541210000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at T_J=150°C, minimal collector current turn off tail, and very low saturation voltage (V_CE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive V_CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.