It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

STGWA20HP65FB2

Name: STMicroelectronics STGWA20HP65FB2
Brand: STMicroelectronics
SKU: 511-STGWA20HP65FB2
Price: 55178.55 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STGWA20HP65FB2

Mfr. No:

STGWA20HP65FB2

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop, 650 V, 20 A, high speed HB2 series IGBT in a TO-247 long

Complete Your Design

Datasheet:

STGWA20HP65FB2 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STGWA20HP65FB2

In Stock: 493

Stock:: 493 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 493 will be subject to minimum order requirements.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-,--

Ext. Price:

Rp-,--

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp55.178,55	Rp55.178,55
	Rp29.778,90	Rp297.789,00
	Rp20.144,55	Rp2.014.455,00
	Rp19.619,04	Rp11.771.424,00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.65 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	40 A
Pd - Power Dissipation:	147 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	HB2
Packaging:	Tube
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs
Unit Weight:	6,100 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STGWA20HP65FB2 Datasheet (PDF)

Application Notes

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at T_J=150°C, minimal collector current turn off tail, and very low saturation voltage (V_CE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive V_CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

650V IH Series IGBTs

STMicroelectronics 650V IH Series IGBTs offer high efficiency for induction heating systems and soft switching applications. The STMicroelectronics IGBTs belong to the STPOWER™ family that exceeds the HB series, currently used for induction heating applications. The 650V IH series ensures increased efficiency in final applications thanks to a lower V_CE(sat) combined with very low turn-off energy. 40A and 50A devices are already available in TO-247 Long Leads packages, and 20A and 30A devices are being developed.