STGWT30H60DFB

STMicroelectronics
511-STGWT30H60DFB
STGWT30H60DFB

Mfr.:

Description:
IGBTs Trench gate field-stop 600 V, 30 A high speed HB series IGBT
Complete Your Design

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about STMicroelectronics STGWT30H60DFB

In Stock: 712

Stock:
712 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-,--
Ext. Price:
Rp-,--
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp51.675,15 Rp51.675,15
Rp27.852,03 Rp278.520,30
Rp25.224,48 Rp2.522.448,00

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-3P
Through Hole
Single
600 V
1.55 V
- 20 V, 20 V
60 A
260 W
- 55 C
+ 175 C
STGWT30H60DFB
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 30 A
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: KR
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 300
Subcategory: IGBTs
Unit Weight: 6,756 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.