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STH300NH02L-6

Name: STMicroelectronics STH300NH02L-6
Brand: STMicroelectronics
SKU: 511-STH300NH02L-6
Price: 35034 IDR
Availability: OutOfStock

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Mouser No:

511-STH300NH02L-6

Mfr. No:

STH300NH02L-6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-Ch 24V 0.95mOhm 180A STripFET Mosfet

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Datasheet:

STH300NH02L-6 Datasheet (PDF)

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 16 Weeks Estimated factory production time.

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Minimum: 1000 Multiples: 1000

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 1000)
	Rp35.034,00	Rp35.034.000,00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	24 V
Id - Continuous Drain Current:	180 A
Rds On - Drain-Source Resistance:	1.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	109 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	300 W
Channel Mode:	Enhancement
Qualification:	AEC-Q100
Tradename:	STripFET
Packaging:	Reel
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	IT
Fall Time:	94.4 ns
Product Type:	MOSFETs
Rise Time:	275 ns
Series:	STH300NH02L-6
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	138 ns
Typical Turn-On Delay Time:	18 ns
Unit Weight:	1,600 g

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Datasheet

STH300NH02L-6 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541210000
MXHTS:: 85412999
ECCN:: EAR99

STripFET II™ Power MOSFETs

STMicroelectronics STripFET II™ Power MOSFETs are enhancement-mode MOSFETs that benefit from STMicroelectronics proprietary STripFET™ technology with a gate structure. The resulting STripFET™ Power MOSFET exhibits a high current and low R_DS(on). These Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density. These STripFET™ Power MOSFETs are a well-established planar technology for high-efficiency, low-voltage systems.

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R_DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.