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STHU32N65DM6AG

Name: STMicroelectronics STHU32N65DM6AG
Brand: STMicroelectronics
SKU: 511-STHU32N65DM6AG
Price: 85658 IDR
Availability: OutOfStock

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Mouser No:

511-STHU32N65DM6AG

Mfr. No:

STHU32N65DM6AG

Mfr.:

STMicroelectronics

Description:

MOSFETs Automotive-grade N-channel 650 V, 83 mOhm typ., 37 A MDmesh DM6 Power MOSFET in

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Datasheet:

STHU32N65DM6AG Datasheet (PDF)

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On Order:: 600
Factory Lead Time:: 20

Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Packaging:

Full Reel (Order in multiples of 600)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp85.658	Rp85.658
	Rp60.083	Rp600.830
	Rp51.850	Rp5.185.000
Full Reel (Order in multiples of 600)
	Rp49.923	Rp29.953.800

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	37 A
Rds On - Drain-Source Resistance:	97 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	4.75 V
Qg - Gate Charge:	52.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	320 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	JP
Product Type:	MOSFETs
Factory Pack Quantity:	600
Subcategory:	Transistors
Unit Weight:	2,320 g

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Datasheet

STHU32N65DM6AG Datasheet (PDF)

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

MDmesh DM6 N-channel Power MOSFETs

STMicroelectronics MDmesh DM6 N-channel Power MOSFETs are part of the MDmesh™ DM6 fast-recovery diodes. These automotive-grade N-channel power MOSFETs offer very low recovery charge (Q_rr) and recovery time (t_rr), combined with low R_DS(on). The DM6 power MOSFETs feature low gate charge, low input capacitance, low on-resistance, high dv/dt ruggedness, and Zener-protection. These power MOSFETs are suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.