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STI4N62K3

Name: STMicroelectronics STI4N62K3
Brand: STMicroelectronics
SKU: 511-STI4N62K3
Price: 30830 IDR
Availability: InStock

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Mouser No:

511-STI4N62K3

Mfr. No:

STI4N62K3

Mfr.:

STMicroelectronics

Datasheet:

ECAD Model:

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More Information

Stock:: 886 Can Dispatch Immediately

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 886 will be subject to minimum order requirements.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-262-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	620 V
Id - Continuous Drain Current:	3.8 A
Rds On - Drain-Source Resistance:	2 Ohms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3.75 V
Qg - Gate Charge:	22 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	70 W
Channel Mode:	Enhancement
Tradename:	SuperMESH
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	19 ns
Product Type:	MOSFETs
Rise Time:	9 ns
Series:	STI4N62K3
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	29 ns
Typical Turn-On Delay Time:	10 ns
Unit Weight:	2,387 g