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STL125N8F7AG

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Mouser No:

511-STL125N8F7AG

Mfr. No:

STL125N8F7AG

Mfr.:

STMicroelectronics

Description:

MOSFETs Automotive N-channel 80 V, 3.6 mOhm typ., 120 A, STripFET F7 Power MOSFET in a P

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Datasheet:

STL125N8F7AG Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerFLAT-5x6-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	120 A
Rds On - Drain-Source Resistance:	4.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	76 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	167 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	23 ns
Product Type:	MOSFETs
Rise Time:	39 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	47 ns
Typical Turn-On Delay Time:	23 ns
Unit Weight:	76 mg

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Datasheet

STL125N8F7AG Datasheet (PDF)

PCN

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

STripFET™ F7 Power MOSFETs

STMicroelectronics STripFET F7 MOSFETs feature an enhanced trench-gate structure with faster and more efficient switching for simplified designs and reduced equipment size and cost. Low on-state resistance combined with low switching losses lower on-state resistance while reducing internal capacitances and gate charge. They are ideal for synchronous rectification and have an optimal capacitance Crss/Ciss ratio for lowest EMI. STMicroelectronics STripFET F7 feature high avalanche ruggedness.