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STL33N60DM6

Name: STMicroelectronics STL33N60DM6
Brand: STMicroelectronics
SKU: 511-STL33N60DM6
Price: 26275.5 IDR
Availability: OutOfStock

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Mouser No:

511-STL33N60DM6

Mfr. No:

STL33N60DM6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 125 mOhm typ., 21 A MDmesh DM6 Power MOSFET in PowerFLAT 8x8 HV

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Datasheet:

STL33N60DM6 Datasheet (PDF)

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 18 Weeks Estimated factory production time.

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Minimum: 3000 Multiples: 3000

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Ext. Price:

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 3000)
	Rp26.275,50	Rp78.826.500,00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	21 A
Rds On - Drain-Source Resistance:	140 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3.25 V
Qg - Gate Charge:	35 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	150 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Reel
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	SG
Fall Time:	35 ns
Moisture Sensitive:	Yes
Product Type:	MOSFETs
Rise Time:	9 ns
Series:	STL33N60DM2
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	7 ns
Typical Turn-On Delay Time:	14 ns

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Datasheet

STL33N60DM6 Datasheet (PDF)

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

MDmesh™ DM2 Power MOSFETs

STMicroelectronics MDmesh™ DM2 Power MOSFETs are silicon-based MOSFETs with a fast recovery intrinsic diode optimized for ZVS phase-shift bridge topologies. STMicroelectronics MDmesh DM2 MOSFETS feature a very low recovery charge and time (Q_rr, t_rr) and shows 20% lower R_DS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.