It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

STL66N3LLH5

Name: STMicroelectronics STL66N3LLH5
Brand: STMicroelectronics
SKU: 511-STL66N3LLH5
Price: 34859 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STL66N3LLH5

Mfr. No:

STL66N3LLH5

Mfr.:

STMicroelectronics

Description:

MOSFETs N-Ch 30V 0.0048 Ohm 21A STripFET V

Complete Your Design

Datasheet:

STL66N3LLH5 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STL66N3LLH5

In Stock: 168

Stock:: 168 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 17 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp34.859	Rp34.859
	Rp22.247	Rp222.470
	Rp15.030	Rp1.503.000
	Rp11.929	Rp5.964.500
	Rp10.983	Rp10.983.000
Full Reel (Order in multiples of 3000)
	Rp10.440	Rp31.320.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerFLAT-5x6-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	21 A
Rds On - Drain-Source Resistance:	5.8 mOhms
Vgs - Gate-Source Voltage:	- 22 V, 22 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	12 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	4.8 W
Channel Mode:	Enhancement
Qualification:	AEC-Q100
Tradename:	STripFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	4.5 ns
Product Type:	MOSFETs
Rise Time:	14.5 ns
Series:	STL66N3LLH5
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	22.7 ns
Typical Turn-On Delay Time:	9.3 ns
Unit Weight:	76 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STL66N3LLH5 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541210000
MXHTS:: 85412999
ECCN:: EAR99

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R_DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.

STMicroelectronics STripFET V Power MOSFETs

STripFET V™ Power MOSFETs

STMicroelectronics STripFET V™ Power MOSFETs are enhancement-mode MOSFETs that benefit from STMicroelectronics proprietary STripFET™ technology with an updated gate structure. The advanced planar technology is ideal for high efficiency, improving Figure of Merit (FoM). These STMicroelectronics MOSFETs exhibit the high current and low R_DS(on) required by automotive and industrial switching applications. The advanced planar technology used in these devices is ideal for high-efficiency, low-voltage systems.