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STP130N6F7

Name: STMicroelectronics STP130N6F7
Brand: STMicroelectronics
SKU: 511-STP130N6F7
Price: 41690 IDR
Availability: InStock

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Mouser No:

511-STP130N6F7

Mfr. No:

STP130N6F7

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in TO-220 package

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Datasheet:

STP130N6F7 Datasheet (PDF)

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In Stock: 1.896

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Factory Lead Time:: 21 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp41.690	Rp41.690
	Rp18.393	Rp183.930
	Rp16.991	Rp1.699.100
	Rp14.609	Rp7.304.500
	Rp13.365	Rp13.365.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	80 A
Rds On - Drain-Source Resistance:	5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	42 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	160 W
Channel Mode:	Enhancement
Tradename:	STripFET
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	24 ns
Product Type:	MOSFETs
Rise Time:	44 ns
Series:	STP130N6F7
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	62 ns
Typical Turn-On Delay Time:	24 ns
Unit Weight:	2 g

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Datasheet

STP130N6F7 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

STMicroelectronics STripFET VII Power MOSFETs

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R_DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.