It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

STW24N60M2

Name: STMicroelectronics STW24N60M2
Brand: STMicroelectronics
SKU: 511-STW24N60M2
Price: 61309.5 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STW24N60M2

Mfr. No:

STW24N60M2

Mfr.:

STMicroelectronics

Description:

MOSFETs N-Ch 600V 0.168Ohm 18A MDmesh M2

Complete Your Design

Datasheet:

STW24N60M2 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STW24N60M2

In Stock: 806

Stock:: 806 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-,--

Ext. Price:

Rp-,--

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp61.309,50	Rp61.309,50
	Rp33.457,47	Rp334.574,70
	Rp27.326,52	Rp2.732.652,00
	Rp22.772,10	Rp13.663.260,00
	Rp19.794,21	Rp23.753.052,00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	18 A
Rds On - Drain-Source Resistance:	190 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	29 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	150 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	61 ns
Product Type:	MOSFETs
Rise Time:	9 ns
Series:	STW24N60M2
Factory Pack Quantity:	600
Subcategory:	Transistors
Typical Turn-Off Delay Time:	14 ns
Typical Turn-On Delay Time:	15 ns
Unit Weight:	6 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STW24N60M2 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between R_DS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.