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STW56N65DM2

Name: STMicroelectronics STW56N65DM2
Brand: STMicroelectronics
SKU: 511-STW56N65DM2
Price: 196366 IDR
Availability: InStock

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Mouser No:

511-STW56N65DM2

Mfr. No:

STW56N65DM2

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 packag

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Datasheet:

STW56N65DM2 Datasheet (PDF)

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In Stock: 598

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp196.366	Rp196.366
	Rp130.677	Rp1.306.770
	Rp111.758	Rp11.175.800
	Rp106.679	Rp64.007.400

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	48 A
Rds On - Drain-Source Resistance:	58 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	88 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	360 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	7.7 ns
Product Type:	MOSFETs
Rise Time:	31 ns
Series:	STW56N65DM2
Factory Pack Quantity:	600
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	157 ns
Typical Turn-On Delay Time:	28 ns
Unit Weight:	6 g

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Datasheet

STW56N65DM2 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8542310000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 8542310302
ECCN:: EAR99

MDmesh™ DM2 Power MOSFETs

STMicroelectronics MDmesh™ DM2 Power MOSFETs are silicon-based MOSFETs with a fast recovery intrinsic diode optimized for ZVS phase-shift bridge topologies. STMicroelectronics MDmesh DM2 MOSFETS feature a very low recovery charge and time (Q_rr, t_rr) and shows 20% lower R_DS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.